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SIS892ADN - N-Channel 100-V (D-S) MOSFET

Features

  • TrenchFET® power MOSFET.
  • 100 % Rg and UIS tested.
  • Capable of operating with 5 V gate drive.
  • Material categorization:  for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SIS892ADN
Manufacturer Vishay
File Size 1.34 MB
Description N-Channel 100-V (D-S) MOSFET
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www.vishay.com SiS892ADN Vishay Siliconix N-Channel 100 V (D-S) MOSFET PowerPAK® 1212-8 Single D D8 D7 D6 5 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 7.5 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) f Configuration 1 2S 3S 4S G Bottom View 100 0.033 0.036 0.047 6.1 28 Single FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested • Capable of operating with 5 V gate drive • Material categorization:  for definitions of compliance please see www.vishay.
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