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SiS888DN
Vishay Siliconix
N-Channel 150 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () (MAX.)
150
0.058 at VGS = 10 V
0.085 at VGS = 7.5 V
ID (A)f 20.2 16.6
Qg (TYP.) 7.6 nC
3.3 mm
PowerPAK 1212-8S 3.3 mm
S 1
S 2
S 3
G 4
0.75 mm
D 8
D 7
Ordering Information:
D 6
D 5
Bottom View
SiS888DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• ThunderFET® technology optimizes balance of RDS(on), Qg, Qsw and Qoss
• 100 % Rg and UIS tested • Material categorization:
For definitions of compliance please see www.vishay.
SiS888DN Datasheet
