SiR688DP - N-Channel MOSFET

Datasheet Summary

Features

TrenchFET® Power MOSFET.
100 % Rg and UIS Tested.
Low Qg for High Efficiency.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

Vishay

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Datasheet Details

Part number	SiR688DP
Manufacturer	Vishay
File Size	323.18 KB
Description	N-Channel MOSFET
Datasheet	SiR688DP Datasheet
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Full PDF Text Transcription

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N-Channel 60 V (D-S) MOSFET SiR688DP Vishay Siliconix PRODUCT SUMMARY VDS (V) 60 RDS(on) () Max. 0.0035 at VGS = 10 V 0.0045 at VGS = 6 V 0.0060 at VGS = 4.5 V ID (A)a 60 60 60 Qg (Typ.) 20.5 nC PowerPAK® SO-8 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3 G 4 Bottom View Ordering Information: SiR688DP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Low Qg for High Efficiency • Material categorization: For definitions of compliance please see www.vishay.

Published: Nov 27, 2019 |