SiR608DP - N-Channel MOSFET

Datasheet Summary

Features

TrenchFET® Gen IV power MOSFET.
45 V Drain-source break-down voltage.
Tuned for low Qg and Qoss.
100 % Rg and UIS tested.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Vishay

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Datasheet Details

Part number	SiR608DP
Manufacturer	Vishay
File Size	243.54 KB
Description	N-Channel MOSFET
Datasheet	SiR608DP Datasheet
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Full PDF Text Transcription

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www.vishay.com SiR608DP Vishay Siliconix N-Channel 45 V (D-S) MOSFET PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 5.15 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration 1 2S 3S 4S G Bottom View 45 0.00120 0.00180 50.5 208 Single FEATURES • TrenchFET® Gen IV power MOSFET • 45 V Drain-source break-down voltage • Tuned for low Qg and Qoss • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.

Published: Dec 25, 2021 |