SiR638DP - N-Channel MOSFET

Datasheet Summary

Features

TrenchFET® Gen IV power MOSFET.
100 % Rg and UIS tested.
Qgd / Qgs ratio < 1 optimizes switching characteristics.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Vishay

📥 Download Datasheet

Datasheet Details

Part number	SiR638DP
Manufacturer	Vishay
File Size	407.98 KB
Description	N-Channel MOSFET
Datasheet	SiR638DP Datasheet
Additional preview pages of the SiR638DP datasheet.

📁 Similar Datasheet

SIR67-21C-L9-TR10 - Top Infrared LED (Everlight Electronics)
SIR67-21C-L9-TR8 - Top Infrared LED (Everlight Electronics)
SIR67-21C-TR8 - LED (Everlight Electronics)
SIR-320ST3F - Infrared light emitting diode (Rohm)
SIR-341ST3F - Infrared light emitting diode (Rohm)
SIR-34ST3F - Infrared light emitting diode (Rohm)
SIR-505STA47 - Infrared light emitting diode (Rohm)
SIR-563ST3F - Infrared light emitting diode (Rohm)
SIR-568ST3 - Infrared light emitting diode (Rohm)
SIR-568ST3F - Infrared light emitting diode (Rohm)

Other Datasheets by Vishay

SiR608DP - N-Channel MOSFET
SiR626DP - N-Channel MOSFET
SIR640ADP - N-Channel MOSFET
SIR662DP - N-Channel MOSFET
SiR688DP - N-Channel MOSFET
SiR690DP - N-Channel MOSFET
SiR104ADP - N-Channel 100V MOSFET
SiR104LDP - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

www.vishay.com SiR638DP Vishay Siliconix N-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) () (MAX.) 0.00088 at VGS = 10 V 0.00116 at VGS = 4.5 V ID (A) a, g 100 100 Qg (TYP.) 63 nC PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 Top View 5.15 mm 1 2S 3S 4S G Bottom View Ordering Information: SiR638DP-T1-GE3 (lead (Pb)-free and halogen-free) FEATURES • TrenchFET® Gen IV power MOSFET • 100 % Rg and UIS tested • Qgd / Qgs ratio < 1 optimizes switching characteristics • Material categorization: for definitions of compliance please see www.vishay.

Published: Aug 19, 2019 |