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SIHLD110 - Power MOSFET

Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

  • Dynamic dV/dt Rating.
  • Repetitive Avalanche Rated.
  • For Automatic Insertion.
  • End Stackable.
  • Logic-Level Gate Drive.
  • RDS(on) Specified at VGS = 4 V and 5 V.
  • 175 °C Operating Temperature.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 Note.
  • Lead (Pb)-containing terminations are not RoHS-compliant. Exemptions may apply.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com IRLD110, SiHLD110 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 5.0 V 6.1 2.6 3.3 Single 0.54 D HVMDIP S G D G S N-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • For Automatic Insertion • End Stackable • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Note * Lead (Pb)-containing terminations are not RoHS-compliant. Exemptions may apply.
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