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SIHLD014 - Power MOSFET

Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

  • 60 0.20.
  • Dynamic dV/dt Rating.
  • For Automatic Insertion.
  • End Stackable.
  • Logic-Level Gate Drive.
  • RDS(on) Specified at VGS = 4 V and 5 V.
  • 175 °C Operating Temperature.
  • Fast Switching.
  • Compliant to RoHS Directive 2002/95/EC Available RoHS.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRLD014, SiHLD014 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5 V 8.4 2.6 6.4 Single D FEATURES 60 0.20 • Dynamic dV/dt Rating • For Automatic Insertion • End Stackable • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature • Fast Switching • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT HVMDIP DESCRIPTION G S D S N-Channel MOSFET G Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combinations on standard 0.1" pin centers.
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