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SiHL510 - Power MOSFET

Datasheet Summary

Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

  • Dynamic dV/dt Rating.
  • Repetitive Avalanche Rated.
  • Logic-Level Gate Drive.
  • RDS(on) Specified at VGS = 4 V and 5 V.
  • 175 °C Operating Temperature.
  • Fast Switching.
  • Ease of Paralleling.
  • Compliant to RoHS Directive 2002/95/EC Available RoHS.

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Datasheet Details

Part number SiHL510
Manufacturer Vishay Siliconix
File Size 721.63 KB
Description Power MOSFET
Datasheet download datasheet SiHL510 Datasheet
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Power MOSFET IRL510, SiHL510 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 100 VGS = 5.0 V 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single 0.54 TO-220AB D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
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