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SIHLD024 - Power MOSFET

Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

  • Dynamic dV/dt Rating.
  • For Automatic Insertion.
  • End Stackable.
  • Logic-Level Gate Drive.
  • RDS(on) Specified at VGS = 4 V and 5 V.
  • 175 °C Operating Temperature.
  • Fast Switching.
  • Compliant to RoHS Directive 2002/95/EC Available RoHS.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power MOSFET IRLD024, SiHLD024 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 5.0 V 18 4.5 12 Single 0.10 D HVMDIP S G D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Rating • For Automatic Insertion • End Stackable • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature • Fast Switching • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
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