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SUM40N15-38 - N-Channel MOSFET

Features

  • TrenchFET® Power MOSFETs.
  • 175 °C Junction Temperature.
  • New Low Thermal Resistance Package.
  • PWM Optimized.
  • Compliant to RoHS Directive 2002/95/EC.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SUM40N15-38 Vishay Siliconix N-Channel 150-V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 0.038 at VGS = 10 V 0.042 at VGS = 6 V ID (A) 40 38 TO-263 FEATURES • TrenchFET® Power MOSFETs • 175 °C Junction Temperature • New Low Thermal Resistance Package • PWM Optimized • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch D G DS Top View Ordering Information: SUM40N15-38-E3 (Lead (Pb)-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current IAR Repetitive Avalanche Energya L = 0.
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