ID (A)a
40a 40a
rDS(on) (W)
0.012 @ VGS = 10 V 0.026 @ VGS = 4.5 V
Qg (Typ)
75 7.5
D D D D
TrenchFETr Power MOSFET 175_C Junction Temperature Optimized for High-Side Synchronous Rectifier 100% Rg Tested.
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SUM40N02-12P
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
20
FEATURES
ID (A)a
40a 40a
rDS(on) (W)
0.012 @ VGS = 10 V 0.026 @ VGS = 4.5 V
Qg (Typ)
75 7.