ID (A)
40 33
rDS(on) (W)
0.030 @ VGS = 10 V 0.045 @ VGS = 4.5 V
Qg (Typ)
18
D TrenchFETr Power MOSFET D 175_C Junction Temperature D 100% Rg Tested
TO-263
D
DRAIN connected to TAB G D S
G
Top View Ordering Information: SUM40N03-30L.
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SUM40N03-30L
New Product
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
30
FEATURES
ID (A)
40 33
rDS(on) (W)
0.030 @ VGS = 10 V 0.045 @ VGS = 4.5 V
Qg (Typ)
18
D TrenchFETr Power MOSFET D 175_C Junction Temperature D 100% Rg Tested
TO-263
D
DRAIN connected to TAB G D S
G
Top View Ordering Information: SUM40N03-30L—E3 S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Single Pulse Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.
SUM40N03-30L Datasheet
