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SUM40N10-30 - N-Channel MOSFET

Features

  • rDS(on) (W) ID (A) 40 37.5 0.030 @ VGS = 10 V 0.034 @ VGS = 6 V D TrenchFETr Power.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com SUM40N10-30 New Product Vishay Siliconix N-Channel 100-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 100 FEATURES rDS(on) (W) ID (A) 40 37.5 0.030 @ VGS = 10 V 0.034 @ VGS = 6 V D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Low Thermal Resistance Package APPLICATIONS D Automotive - Motor Drives - 12-V Switches D TO-263 G G D S S N-Channel MOSFET Top View Ordering Information: SUM40N10-30 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.
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