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Si3905DV
New Product
Vishay Siliconix
Dual P-Channel 8-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.125 @ VGS = –4.5 V –8 8 0.175 @ VGS = –2.5 V 0.265 @ VGS = –1.8 V
ID (A)
"2.5 "2.0 "1.7
S1
S2
TSOP-6 Top View
G1 1 6 D1 G1 3 mm S2 2 5 S1 G2
G2
3
4
D2
2.85 mm
D1 P-Channel MOSFET
D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Diode Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IS PD TJ, Tstg
Symbol
VDS VGS
Limit
–8 "8 "2.5 "2.0 "7 –1.05 1.15
Unit
V
A
W 0.
SI3905DV Datasheet
