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Si3900DV
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.125 @ VGS = 4.5 V 0.200 @ VGS = 2.5 V
ID (A)
2.4 1.8
D1
D2
TSOP-6 Top View
G1 1 6 D1
3 mm
S2
2
5
S1
G1
G2
G2
3
4
D2
2.85 mm
S1 N-Channel MOSFET
S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C
Symbol
VDS VGS
5 sec
20
Steady State
"12
Unit
V
2.4 ID IDM IS PD TJ, Tstg 1.05 1.15 0.59 –55 to 150 1.7 8
2.0 1.4 A 0.75 0.83 0.
SI3900DV Datasheet
