Datasheet4U Logo Datasheet4U.com

VBPB16I15 - 600V Trench and Fieldstop IGBT

Datasheet Summary

Features

  • Very Low VCEsat.
  • Low turn-off losses.
  • High speed switching.
  • Maximum junction temperature 175°C.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).

📥 Download Datasheet

Datasheet preview – VBPB16I15

Datasheet Details

Part number VBPB16I15
Manufacturer VBsemi
File Size 2.09 MB
Description 600V Trench and Fieldstop IGBT
Datasheet download datasheet VBPB16I15 Datasheet
Additional preview pages of the VBPB16I15 datasheet.

📁 Similar Datasheet

  • VBP104FAS - Silicon PIN Photodiode (Vishay)
  • VBP104FASR - Silicon PIN Photodiode (Vishay)
  • VBP104S - Silicon PIN Photodiode (Vishay)
  • VBP104SR - Silicon PIN Photodiode (Vishay)
  • VBPW34FAS - Silicon PIN Photodiode (Vishay)
  • VBPW34FASR - Silicon PIN Photodiode (Vishay)
  • VBPW34S - Silicon PIN Photodiode (Vishay)
  • VBPW34SR - Silicon PIN Photodiode (Vishay)
Other Datasheets by VBsemi

Full PDF Text Transcription

Click to expand full text
VBPB16I15 600V Trench and Fieldstop IGBT www.VBsemi.com PRODUCT SUMMARY VCE (V) IC (A) 600 30 (TC=25 ) 15 (TC=100 ) VCE sat (V) 1.
Published: |