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VBPB1102N - N-Channel MOSFET

Datasheet Summary

Features

  • TrenchFET® Power MOSFET.
  • 175 °C Junction Temperature.
  • Low Thermal Resistance Package.
  • 100 % Rg Tested.

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Datasheet Details

Part number VBPB1102N
Manufacturer VBsemi
File Size 220.29 KB
Description N-Channel MOSFET
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VBPB1102N N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.018 at VGS = 10 V ID (A) 65a TO-3P G D S D (TAB) FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package • 100 % Rg Tested APPLICATIONS • Isolated DC/DC Converters D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current Single Pulse Avalanche Energyb L = 0.
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