Datasheet4U Logo Datasheet4U.com

VBPB112MI50 - 1200V Trench and Fieldstop IGBT

Datasheet Summary

Features

  • Very Low VCEsat.
  • Low turn-off losses.
  • High speed switching.
  • Maximum junction temperature 175°C.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).

📥 Download Datasheet

Datasheet preview – VBPB112MI50

Datasheet Details

Part number VBPB112MI50
Manufacturer VBsemi
File Size 3.18 MB
Description 1200V Trench and Fieldstop IGBT
Datasheet download datasheet VBPB112MI50 Datasheet
Additional preview pages of the VBPB112MI50 datasheet.

📁 Similar Datasheet

  • VBP104FAS - Silicon PIN Photodiode (Vishay)
  • VBP104FASR - Silicon PIN Photodiode (Vishay)
  • VBP104S - Silicon PIN Photodiode (Vishay)
  • VBP104SR - Silicon PIN Photodiode (Vishay)
  • VBPW34FAS - Silicon PIN Photodiode (Vishay)
  • VBPW34FASR - Silicon PIN Photodiode (Vishay)
  • VBPW34S - Silicon PIN Photodiode (Vishay)
  • VBPW34SR - Silicon PIN Photodiode (Vishay)
Other Datasheets by VBsemi

Full PDF Text Transcription

Click to expand full text
VBPB112MI50 1200V Trench and Fieldstop IGBT www.VBsemi.com PRODUCT SUMMARY VCE (V) IC (A) 1200 100 (TC=25 ) 50 (TC=100 ) VCE sat (V) 1.
Published: |