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VBPB165R20S - N-Channel MOSFET

Features

  • Low figure-of-merit (FOM) Ron x Qg.
  • Low input capacitance (Ciss).
  • Reduced switching and conduction losses.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).

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Datasheet preview – VBPB165R20S

Datasheet Details

Part number VBPB165R20S
Manufacturer VBsemi
File Size 674.09 KB
Description N-Channel MOSFET
Datasheet download datasheet VBPB165R20S Datasheet
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Full PDF Text Transcription

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VBPB165R20S www.VBsemi.com N-Channel 650V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. (Ω) at 25 °C 650 VGS = 10 V 0.
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