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VBE1615B - N-Channel MOSFET

Datasheet Summary

Features

  • 175 °C Junction Temperature.
  • TrenchFET® Power MOSFET.
  • Material categorization: D TO-252 www. VBsemi. com GD S G S N-Channel MOSFET.

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Datasheet Details

Part number VBE1615B
Manufacturer VBsemi
File Size 273.06 KB
Description N-Channel MOSFET
Datasheet download datasheet VBE1615B Datasheet
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VBE1615B N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.010 at VGS = 10 V 0.011 at VGS = 4.5 V ID (A)a 60 58 FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization: D TO-252 www.VBsemi.com GD S G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 100 °C ID 60 48a Pulsed Drain Current IDM 100 A Continuous Source Current (Diode Conduction) IS 50a Avalanche Current IAS 50 Single Avalanche Energy (Duty Cycle  1 %) L = 0.1 mH EAS 125 mJ Maximum Power Dissipation TC = 25 °C TA = 25 °C PD 136 3b, 8.
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