VBE55-12NO7 Datasheet PDF - IXYS High Performance Fast Recovery Diode Specs

VBE55-12NO7 - High Performance Fast Recovery Diode

Datasheet Summary

Features

/ Advantages:.
Planar passivated chips.
Very low leakage current.
Very short recovery time.
Improved thermal behaviour.
Very low Irm-values.
Very soft recovery behaviour.
Avalanche voltage rated for reliable operation.
Soft reverse recovery for low EMI/RFI.
Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch.

Datasheet Details

Part number	VBE55-12NO7
Manufacturer	IXYS
File Size	211.54 KB
Description	High Performance Fast Recovery Diode
Datasheet	VBE55-12NO7 Datasheet
Additional preview pages of the VBE55-12NO7 datasheet.

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Full PDF Text Transcription

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HiPerFRED Module High Performance Fast Recovery Diode Low Loss and Soft Recovery 1~ Rectifier Bridge Part number VBE55-12NO7 K N A D VBE55-12NO7 VRRM = 1200 V I DAV = 59 A t rr = 60 ns Backside: isolated Features / Advantages: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Applications: ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power sup

Published: Oct 7, 2025 |