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VBE1695 - N-Channel MOSFET

Features

  • TrenchFET® Power MOSFET.
  • 100 % Rg and UIS Tested.
  • Material categorization: For definitions of compliance please see.

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Datasheet Details

Part number VBE1695
Manufacturer VBsemi
File Size 274.47 KB
Description N-Channel MOSFET
Datasheet download datasheet VBE1695 Datasheet
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Full PDF Text Transcription

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VBE1695 N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 60 RDS(on) () Max. 0.073 at VGS = 10 V 0.085 at VGS = 4.5 V TO-252 ID (A) 18 15 Qg (Typ.) 19.8 G D S Drain Connected to Tab FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see APPLICATIONS • DC/DC Converters • DC/AC Inverters • Motor Drives D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (t = 300 µs) Avalanche Current Single Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range TC = 25 °C TC = 70 °C L = 0.
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