VBE165R10S - N-Channel Power MOSFET

Features

Low figure-of-merit (FOM) Ron x Qg.
Low input capacitance (Ciss).
Reduced switching and conduction losses.
Ultra low gate charge (Qg).
Avalanche energy rated (UIS).

VBsemi

Datasheet Details

Part number	VBE165R10S
Manufacturer	VBsemi
File Size	288.16 KB
Description	N-Channel Power MOSFET
Datasheet	VBE165R10S Datasheet
Additional preview pages of the VBE165R10S datasheet.

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Full PDF Text Transcription

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VBM165R10S / VBE165R10S / VBMB165R10S www.VBsemi.com N-Channel 650V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 0.5 38 4 4.

Published: Dec 22, 2024 |