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VBA5840
N- and P-Channel 80-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
N-Channel 80 P-Channel - 80
0.046 at VGS = 10 V 0.059 at VGS = 4.5 V 0.100 at VGS = - 10 V 0.126 at VGS = - 4.5 V
ID (A)a Qg (Typ.)
5.3 6 nC
4.7
- 3.9 - 3.5
8 nC
FEATURES • Halogen-free According to IEC 61249-2-21
Available • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested
APPLICATIONS • CCFL Inverter
S1 1 G1 2 S2 3 G2 4
SO-8
8 D1 7 D1 6 D2 5 D2
D1 G1
S2 G2
Top View
S1 N-Channel MOSFET
D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
VDS
60
- 60 V
VGS
± 20
TC = 25 °C
5.3
- 3.9
TC = 70 °C TA = 25 °C
ID
4.3 4.
VBA5840 Datasheet
