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VBA1104N
N-Channel 100 V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS RDS(on) VGS = 10 V ID Configuration
100
V
32
mΩ
9
A
Single
S1 S2 S3 G4
SO-8
Top View
8D 7D 6D 5D
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • Extremely Low Qgd for Switching Losses • 100 % Rg Tested • 100 % Avalanche Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch
D
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.
VBA1104N Datasheet
