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VBA1206
N-Channel 20-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0049 at VGS = 4.5 V 20
0.0056 at VGS = 2.5 V
ID (A)a 20e 20e
Qg (Typ.) 27.5 nC
S1 S2 S3 G4
SO-8 Top View
8D 7D 6D 5D
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Low-Side MOSFET for Synchronous Buck
- Game Machine
- PC
D
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
20
V
VGS
± 16
TC = 25 °C
20e
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
18.2 15.2b, c
Pulsed Drain Current
TA = 70 °C
12.
VBA1206 Datasheet
