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VBA1208N
N-Channel 200-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
200
0.065 at VGS = 10 V
0.072 at VGS = 6.0 V
ID (A) 5.2 4.1
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFETs
• Compliant to RoHS Directive 2002/95/EC
D
S1 S2 S3 G4
SO-8 Top View
8D 7D 6D 5D
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
200
V
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
5.2
3.35
4.6
2.7
Pulsed Drain Current
IDM
40
A
Avalanch Current
L = 0.1 mH
IAS
15
Continuous Source Current (Diode Conduction)a
IS
2.6
1.
VBA1208N Datasheet
