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IPD640N06LG
www.VBsemi.com
IPD640N06LG N-Channel 6 0-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
60
0.025 at VGS = 10 V
0.030 at VGS = 4.5 V
ID (A)a 45 40
FEATURES • TrenchFET® Power MOSFET
• 175 °C Junction Temperature
Available
RoHS*
COMPLIANT
TO-252
D
GDS Top View
Drain Connected to Tab
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
VGS
± 20
V
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C TC = 100 °C
ID
45 35
Pulsed Drain Current
IDM
100
A
Continuous Source Current (Diode Conduction)
IS
23
Avalanche Current
IAS
20
Single Avalanche Energy (Duty Cycle ≤ 1 %)
L = 0.
IPD640N06LG Datasheet
