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P0920BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
200V
0.42Ω @VGS = 10V
9A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS
±20
Continuous Drain Current
Pulsed Drain Current1 Avalanche Current
TC = 25 °C TC = 100 °C
ID
9 5
IDM
31
IAS
9
Avalanche Energy
L =2.8mH
EAS
113
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
PD Tj, Tstg
62.5 25 -55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC
TYPICAL
MAXIMUM UNITS
2
°C / W
REV 1.
P0920BD Datasheet
