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NIKO-SEM
N-Channel Enhancement Mode
P0920BD
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
200V
0.42Ω
9A
D G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
TC = 25 °C TC = 100 °C
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
L = 2.8mH
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
VGS ID IDM IAS EAS PD Tj, Tstg
1. GATE 2. DRAIN 3. SOURCE
LIMITS ±20 9 5 31 9 113 62.5 25
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATING THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
1Pulse width limited by maximum junction temperature.
P0920BD Datasheet
