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P0910ATG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
9.5mΩ @VGS = 10V
ID 89A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current1 Pulsed Drain Current2
TC = 25 °C TC = 100 °C
ID IDM
89 63 250
Avalanche Current
IAS 113
Avalanche Energy
L = 0.1mH
EAS
647
Power Dissipation
TC = 25 °C TC = 100 °C
PD
156 62.5
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited by package.
SYMBOL
RqJC RqJA
TYPICAL
MAXIMUM
0.8 62.5
UNITS °C / W
Ver 1.
P0910ATG Datasheet
