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P0910AS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
9.5mΩ @VGS = 10V
ID 80A
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
80 50 250
Avalanche Current
IAS 72
Avalanche Energy
L = 0.3mH
EAS
797
Power Dissipation
TC = 25 °C TC = 100 °C
PD
125 50
Operating Junction & Storage Temperature Range Lead Temperature(1/16" from case for 10 sec.)
TJ, TSTG TL
-55 to 150 275
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 1
62.
P0910A Datasheet
