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AO4884 - 40V Dual N-Channel MOSFET

General Description

The AO4884 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.

This is an all purpose device that is suitable for use in a wide range of power conversion applications.

2.

Key Features

  • VDS (V)=40V ID=10A(VGS=10V) RDS(ON).

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Datasheet Details

Part number AO4884
Manufacturer UMW
File Size 497.08 KB
Description 40V Dual N-Channel MOSFET
Datasheet download datasheet AO4884 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1.Description The AO4884 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an all purpose device that is suitable for use in a wide range of power conversion applications. UMW AO4884 40V Dual N-Channel MOSFET 2.Features VDS (V)=40V ID=10A(VGS=10V) RDS(ON)<13mΩ(VGS=10V) RDS(ON)<16mΩ(VGS=4.5V) 3.Pinning information Pin 2,4 1,3 5,6,7,8 Symbol G2, G1 S2, S1 D1, D2 Description SOP-8 GATE SOURCE DRAIN 8765 D2 D2 D1 D1 S2 G2 S1 G1 1234 D1 D2 G1 G2 S1 S2 4.Absolute Maximum Ratings TA=25°C unless otherwise noted Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current c Avalanche Current c Avalanche energy L=0.