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AO4828 - 60V Dual N-ChanneI MOSFET

General Description

The AO4828 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

2.

Key Features

  • VDS (V)=60V ID=6.5A(VGS=10V) RDS(ON).

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Datasheet Details

Part number AO4828
Manufacturer UMW
File Size 648.66 KB
Description 60V Dual N-ChanneI MOSFET
Datasheet download datasheet AO4828 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UMW AO4828 60V Dual N-ChanneI MOSFET 1.Description The AO4828 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. 2.Features VDS (V)=60V ID=6.5A(VGS=10V) RDS(ON)<36mΩ(VGS=10V) RDS(ON)<47mΩ(VGS=4.5V) 3.Pinning information Pin 2,4 1,3 5,6,7,8 Symbol G2, G1 S2, S1 D1, D2 Description SOP-8 GATE SOURCE DRAIN 8765 D1 D2 D2 D2 D1 D1 S2 G2 S1 G1 1234 G1 S1 N-Channel G2 S2 N-Channel 4.Absolute Maximum Ratings TJ= 25°C Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (VGS=4.