Datasheet4U Logo Datasheet4U.com

AO4880 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 40V.
  • ID =20 A (V GS = 10V).
  • RDS(ON) ＜ 17mΩ (VGS = 10V).
  • RDS(ON) ＜ 22mΩ (VGS = 4.5V) MOSFET Unit:mm 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain DDD D G S SS +0.04 0.21 -0.02.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Junction Temperature Storage Temperature Range Symbol Rating Unit VDS 40 V VGS ±20 ID 20 A PD 2 W TJ 150.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AO4882 40V Dual N-Channel MOSFET Alpha & Omega Semiconductors
AO4884 40V Dual N-Channel MOSFET Alpha & Omega Semiconductors
AO4886 100V Dual N-Channel MOSFET Alpha & Omega Semiconductors
AO4800 30V Dual N-Channel MOSFET Alpha & Omega Semiconductors
AO4800 Dual N-Channel 30V MOSFET VBsemi

Other Datasheets by Kexin Semiconductor

Part Number Description
AO4882 Dual N-Channel MOSFET
AO4884 Dual N-Channel MOSFET
AO4886 N-Channel MOSFET
AO4815 Dual P-Channel MOSFET
AO4817-HF Dual P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type N-Channel MOSFET AO4880 SOP-8 ■ Features ● VDS (V) = 40V ● ID =20 A (V GS = 10V) ● RDS(ON) ＜ 17mΩ (VGS = 10V) ● RDS(ON) ＜ 22mΩ (VGS = 4.5V) MOSFET Unit:mm 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain DDD D G S SS +0.04 0.21 -0.