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AO4832 - 30V Dual N-Channel MOSFET

General Description

The AO4832 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.This device is suitable for high side switch in SMPS and g eneral purpose applications.

2.

Key Features

  • VDS (V)=30V ID=10A(VGS=10V) RDS(ON).

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Datasheet Details

Part number AO4832
Manufacturer UMW
File Size 396.63 KB
Description 30V Dual N-Channel MOSFET
Datasheet download datasheet AO4832 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1.Description The AO4832 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.This device is suitable for high side switch in SMPS and g eneral purpose applications. UMW AO4832 30V Dual N-Channel MOSFET 2.Features VDS (V)=30V ID=10A(VGS=10V) RDS(ON)<13mΩ(VGS=10V) RDS(ON)<17.5mΩ(VGS=4.5V) 3.Pinning information Pin Symbol Description SOP-8 5678 D1 D1 D2 D2 D1 D2 2,4 G1, G2 GATE 1,3 5,6,7,8 S1, S2 D1, D2 SOURCE DRAIN G1 G2 S1 G1 S2 G2 S1 S2 1234 4.Absolute Maximum Ratings TA=25°C unless otherwise noted Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current c Avalanche Current c Avalanche energy L=0.