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RF MOSFET Power Transistor, 500 - 1000 MHz
Features
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor Applications Broadband Linear Operation 500‘tiHz to 1200 MHz
IOW, 28V
LF281 OA
Absolute Maximum Ratings at 25°C
F
G
6.22 Ll4 2.92 L40 1.96 3.61
6048 1.40 310 1.65 2.46 4.37
,245 ,045 .I15 ,055 -077 642
z?ss .055 x5 ,065 ,097 572
H
J K L
Electrical Characteristics
at 25°C
Output Capacitance
Reverse Capacitance
Cass CRSS GP 10 50 -
10
pF pF dB % -
V,,=28.0 V, F=l .OMHz V,,=26.0 V, F=l .OMHz V,,=28.0 V, I,,=1 00 mA, P,,=lO.O W, F=l .OGHz V,,=28.0 V, I,,,=1 00 mA, P,,=lO.O W, F=l .OGHz V,,=28.0 V, I,,=1 00 mA, P,,=lO.O W, F=l .OGHz
4.
LF2810A Datasheet
