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LF2805A - RF Power MOSFET Transistor

Download the LF2805A datasheet PDF. This datasheet also covers the LF2805A-MA variant, as both devices belong to the same rf power mosfet transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • N-Channel enhancement mode device.
  • DMOS structure.
  • Lower capacitances for broadband operation.
  • Common source configuration.
  • Lower noise floor.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (LF2805A-MA-COM.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by MACOM Technology Solutions

Part Number Description
LF2802A RF Power MOSFET Transistor

Full PDF Text Transcription

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LF2805A RF Power MOSFET Transistor 5 W, 500 - 1000 MHz, 28 V Features  N-Channel enhancement mode device  DMOS structure  Lower capacitances for broadband operation  Common source configuration  Lower noise floor  Applications Broadband linear operation 500 MHz to 1400 MHz  RoHS Compliant Absolute Maximum Ratings @ 25°C Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance VDS VGS IDS PD TJ TSTG θJC 65 20 1.4 14.4 200 -65 to +150 12.1 Units V V A W °C °C °C/W Typical Device Impedance F (MHz) 500 ZIN (Ω) 4.3 - j29.0 ZLOAD (Ω) 27.3 +j28.6 1000 2.2 - j2.75 8.0 + j16.0 1400 2.8 - j3.0 9.4 + j10.6 VDD = 28V, IDQ = 50mA, POUT = 5.
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