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RF MOSFET Power Transistor, 5W, 28V 500 - 1000 MHz
Features
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor AppIications . *Broadband Linear Operation 500 MHz to 1400 MHz
LF2805A
Absolute Maximum Ratings at 25°C
Electrical Characteristics at 25°C
Parameter Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage ForwardTransconductance Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance Symbol BV,,, ‘Dss IGSS VGSCTW GM C ISS Coss CRSS GP ‘1D VSWR-T 10 50 2.0
Min 65 -
Max 1.0 1.0
6.0
Units V mA p-4
V
lest Conditions V,,=O.O V, 1,,=2.0 mA V,,=28.0 V, V,,=O.
LF2805A Datasheet
