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LF2802A - RF Power MOSFET Transistor

Download the LF2802A datasheet PDF (LF2802A-MA included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for rf power mosfet transistor.

Features

  • N-Channel enhancement mode device.
  • DMOS structure.
  • Lower capacitances for broadband operation.
  • Common source configuration.
  • Lower noise floor.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (LF2802A-MA-COM.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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LF2802A RF Power MOSFET Transistor 2 W, 500 - 1000 MHz, 28 V Features  N-Channel enhancement mode device  DMOS structure  Lower capacitances for broadband operation  Common source configuration  Lower noise floor  Applications Broadband linear operation 500 MHz to 1400 MHz  RoHS Compliant Absolute Maximum Ratings @ 25°C Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance VDS VGS IDS PD TJ TSTG θJC 65 20 0.7 8 200 -55 to +150 21.8 Units V V A W °C °C °C/W Typical Device Impedance F (MHz) 500 ZIN (Ω) 10.0 - j41.5 ZLOAD (Ω) 40.0 +j53.0 1000 4.2 - j12.0 11.85 + j33.0 1400 3.5 - j1.0 7.5 + j23.3 VDD = 28V, IDQ = 25mA, POUT = 2.
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