TRS8V65H - SiC Schottky Barrier Diode

Product Overview

Toshiba

Part number	TRS8V65H
Manufacturer	Toshiba
File Size	446.33 KB
Description	SiC Schottky Barrier Diode
Datasheet	TRS8V65H Datasheet
Additional preview pages of the TRS8V65H datasheet.

(1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ. ) (3) Low total capacitive charge: Qc = 22 nC (typ. ) (4) Low reverse current: IR = 1.5 µA (typ. ) 3. Packaging and Internal Circuit DFN8x8 TRS8V65H 1, 2: N. C. 3, 4: Anode 5: Cathode (heatsink) ©2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2023-05 2023-04-10 Rev.1.0 TRS8V65H 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
) Characteristics Symb.

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Published: Feb 28, 2025 |