TRS10E65F - SiC Schottky Barrier Diode

Product Overview

Toshiba

Part number	TRS10E65F
Manufacturer	Toshiba
File Size	288.81 KB
Description	SiC Schottky Barrier Diode
Datasheet	TRS10E65F Datasheet
Additional preview pages of the TRS10E65F datasheet.

(1) Chip design of 2nd generation. (2) High surge current capability : IFSM = 83A (Max) (3) The junction capacitance is small : Cj = 36 pF (Typ. ) (4) The reverse current is small. : IR = 0.5 µA (Typ. ) 3. Packaging and Internal Circuit TRS10E65F TO-220-2L 1: Cathode 2: Anode ©2016-2018 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2016-07 2018-06-27 Rev.2.0 TRS10E65F 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteris.

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Published: Dec 9, 2020 |