TRS24N65FB - SiC Schottky Barrier Diode

Product Overview

Toshiba

Part number	TRS24N65FB
Manufacturer	Toshiba
File Size	263.57 KB
Description	SiC Schottky Barrier Diode
Datasheet	TRS24N65FB Datasheet
Additional preview pages of the TRS24N65FB datasheet.

(1) Chip design of 2nd generation (2) High non-repetitive peak forward surge current: IFSM (Per Leg) / (Both Legs) = 92 A / 184 A (3) Low junction capacitance: Cj (Per Leg) = 46 pF (typ. ) (4) Low reverse current: IR (Per Leg) = 0.6 µA (typ. ) 3. Packaging and Internal Circuit TO-247 1: Anode 2: Cathode (heatsink) 3: Anode ©2019-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2020-07 2020-07-03 Rev.1.0 TRS24N65FB 4. Absolute Maximum Ratings (Note) (Unle.

📁 Similar Datasheet

Other Datasheets by Toshiba

Published: Feb 28, 2025 |