TRS10A65C - SiC Schottky Barrier Diode

Product Overview

Toshiba

Part number	TRS10A65C
Manufacturer	Toshiba
File Size	170.51 KB
Description	SiC Schottky Barrier Diode
Datasheet	TRS10A65C Datasheet
Additional preview pages of the TRS10A65C datasheet.

(1) Forward DC current IF(DC) = 10 A (2) Repetitive peak reverse voltage VRRM = 650 V 3. Packaging and Internal Circuit Pin Assignment TRS10A65C 1: Cathode 2: Anode TO-220F-2L 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Repetitive peak reverse voltage Forward DC current Forward pulse current I2t limit value Junction temperature Storage temperature Isolation voltage (t = 1.0 s) Mounting torque VRRM IF(DC) IFP I2t Tj.

📁 Similar Datasheet

Other Datasheets by Toshiba

Published: Dec 9, 2020 |