TRS8E65H - SiC Schottky Barrier Diode

Product Overview

Toshiba

Part number	TRS8E65H
Manufacturer	Toshiba
File Size	461.54 KB
Description	SiC Schottky Barrier Diode
Datasheet	TRS8E65H Datasheet
Additional preview pages of the TRS8E65H datasheet.

(1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ. ) (3) Low total capacitive charge: Qc = 22 nC (typ. ) (4) Low reverse current: IR = 1.5 µA (typ. ) 3. Packaging and Internal Circuit TO-220-2L TRS8E65H 1: Cathode 2: Anode ©2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2023-05 2023-04-11 Rev.1.0 TRS8E65H 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
) Characteristics Symbol Note Rating Unit.

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Published: Feb 28, 2025 |