TRS6E65F - SiC Schottky Barrier Diode

Product Overview

Toshiba

Part number	TRS6E65F
Manufacturer	Toshiba
File Size	285.77 KB
Description	SiC Schottky Barrier Diode
Datasheet	TRS6E65F Datasheet
Additional preview pages of the TRS6E65F datasheet.

(1) Chip design of 2nd generation. (2) High surge current capability : IFSM = 55A (Max) (3) The junction capacitance is small : Cj = 22 pF (Typ. ) (4) The reverse current is small. : IR = 0.3 µA (Typ. ) 3. Packaging and Internal Circuit TRS6E65F TO-220-2L 1: Cathode 2: Anode ©2016-2018 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2016-07 2018-06-27 Rev.2.0 TRS6E65F 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristi.

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Published: Feb 28, 2025 |