TRS6A65F - SiC Schottky Barrier Diode

Product Overview

Toshiba

Part number	TRS6A65F
Manufacturer	Toshiba
File Size	269.64 KB
Description	SiC Schottky Barrier Diode
Datasheet	TRS6A65F Datasheet
Additional preview pages of the TRS6A65F datasheet.

(1) Chip design of 2nd generation (2) High non-repetitive peak forward surge current: IFSM = 52 A (3) Low junction capacitance: Cj = 22 pF (typ. ) (4) Low reverse current: IR = 0.3 µA (typ. ) (5) Isolation package: TO-220F-2L 3. Packaging and Internal Circuit TRS6A65F TO-220F-2L 1: Cathode 2: Anode ©2016-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2016-11 2020-09-28 Rev.5.0 TRS6A65F 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T.

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Published: Feb 28, 2025 |