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2SA2195 - Silicon PNP Transistor

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Part number 2SA2195
Manufacturer Toshiba
File Size 137.95 KB
Description Silicon PNP Transistor
Datasheet download datasheet 2SA2195 Datasheet

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TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2195 2SA2195 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 200 to 500 (IC = −0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = −0.2 V (max) • High-speed switching: tf = 90 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) 2.0±0.1 0.65±0.05 Unit: mm 2.1±0.1 1.7±0.1 0.3-+00..015 1 2 3 0.166±0.05 0.7±0.05 Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current DC Pulse Collector power dissipation PC Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB −50 V −50 V −7 V −1.7 A −3.
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