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2SA2197 - PNP / NPN Epitaxial Planar Silicon Transistors

Features

  • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications ( ) : 2SA2197 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEB.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Ordering number : ENA0463 2SA2197 / 2SC6102 SANYO Semiconductors DATA SHEET 2SA2197 / 2SC6102 Applications • PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Relay drivers, lamp drivers, motor drivers, flash. Features • • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation.
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