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2SA2192 - PNP Epitaxial Planar Silicon Transistor

Features

  • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C PW≤100µs.

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Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Ordering number : ENA0307 2SA2192 SANYO Semiconductors DATA SHEET 2SA2192 Applications • PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Relay drivers, lamp drivers, motor drivers. Features • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C PW≤100µs Conditions Ratings --50 --50 --50 --8 --10 --13 --2 0.
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